Impact of rare-earth ions incorporation in high mobility wide bandgap degenerated semiconductors: study considering many-body effects and advanced optical dispersion models

The aim of this research project proposal is to study the optoelectronic and electrical properties of IZO, IGZO and IZrO thin films and assess the impact of rare-earth (RE) incorporation in their structure. We plan on using recently developed advanced optical dispersion models for the fundamental absorption, as well as appropriate dispersion models for the free carrier absorption considering the impact of distinct electronic scattering mechanisms through a dynamical resistivity analysis. We expect to determine the conduction and valence band-edge curvature trough an effective masses analysis combining optical and electrical measurements. Subsequently, a crystal field analysis to assess the symmetry of the surrounding environment of the RE ions will be performed on the RE-related light-emission, after activation. Further investigation will follow to engineer the RE light-emitting properties of these materials while trying to keep their most attractive properties such as high optical transparency in the visible range and low resistivity.We believe that this research will shed light on the capabilities of transparent conductive oxides (TCOs) to host optically active RE ions without dramatically compromising their optical and electrical properties. As well as on revisiting the Burstein-Moss shift and electron-electron and electron-impurities interactions and their renormalization effect in the framework of current optical dispersion models for high carrier mobility TCOs such as IZO, IGZO and IZrO thin films.