This study examines the correlation between vacuum postthermal annealing and film thickness, and their effects on the structural, electrical, and optical properties of tin-doped indium oxide thin films. Vacuum annealing proves to be more effective in thinner films, promoting the diffusion of oxygen atoms and the reduction of interstitial oxygen defects. This oxygen removal critically alters the structural properties, causing changes in the lattice constants and a systematic increase in the texture coefficient along the [400] direction. Electrical measurements reveal that the carrier concentration increases as the film thickness decreases, indicating enhanced oxygen vacancy formation and fewer interstitial oxygens due to annealing. Resistivity versus temperature data show a semiconductor-to-metal transition, with the transition temperature depending on the carrier density. Optical studies indicate band gap widening in …
Autor(es):Carlos A Vilca Huayhua, Bill D Aparicio Huacarpuma, LA Ribeiro Junior, JA Guerra, FFH Aragón, JAH Coaquira
Año: 2025
Título de la revista: Materials Today Communications
Volumen: 48
ISSN: 2352-4928
Url: https://doi.org/10.1016/j.mtcomm.2025.113605