Silicon carbide formation in reactive silicon-carbon multilayers
An alternative low thermal budget silicon carbide syntheses route is presented. The method is based on self-propagating high-temperature synthesis of binary silicon-carbon-based reactive multilayers. With this technique, it is possible to obtain cubic polycrystalline silicon carbide at relatively low annealing temperatures by a solid state reaction. The reaction starts above 600 °C. The transformation process proceeds in a four-step process. The reaction enthalpy was determined to be (-70 ± 4) kJ/mol.
Autor(es):Rolf Grieseler, Isabella Gallino, Natallia Duboiskaya, Joachim Döll, Deepshikha Shekhawat, Johannes Reiprich, Jorge A Guerra, Marcus Hopfeld, Hauke L Honig, Peter Schaaf, Jörg Pezoldt
Año: 2022
Título de la revista: Materials Science Forum
Volumen: 1062
Url: https://www.scientific.net/MSF.1062.44