Bandgap engineering of the amorphous wide bandgap semiconductor (SiC)1−x(AlN)x doped with terbium and its optical emission properties
ater. Science Eng. B 174, 114
Autor(es):R. Weingärtner, J.A. Guerra Torres, O. Erlenbach, G. Gálvez de la Puente, F. De Zela, and A. Winnacker
Año: 2010