Capacitance voltage curve simulations for different passivation parameters of dielectric layers on silicon
Surface passivation is a widely used technique to reduce the recombination losses at the semiconductor surface. The passivating layer performance can be mainly characterized by two parameters: The fixed charge...
Año de publicación: 2020
Surface passivation is a widely used technique to reduce the recombination losses at the semiconductor surface. The passivating layer performance can be mainly characterized by two parameters: The fixed charge...
Año de publicación: 2020
Determination of the fundamental absorption and optical bandgap of dielectric thin films from single optical transmittance measurements
In this work, we propose a method to retrieve the thickness and optical constants of dielectric thin films from single optical transmittance measurements. The method is based on the envelope...
Año de publicación: 2019
In this work, we propose a method to retrieve the thickness and optical constants of dielectric thin films from single optical transmittance measurements. The method is based on the envelope...
Año de publicación: 2019
Lattice strain effects on the structural properties and band gap tailoring in columnarly grown Fe-doped SnO2 films deposited by DC sputtering
In this work, we present the study of undoped and Fe-doped SnO2 polycrystalline films grown by direct-current sputtering on glass substrates. X-ray diffraction (XRD) analysis revealed that the as-deposited films...
Año de publicación: 2019
In this work, we present the study of undoped and Fe-doped SnO2 polycrystalline films grown by direct-current sputtering on glass substrates. X-ray diffraction (XRD) analysis revealed that the as-deposited films...
Año de publicación: 2019
Luminescence properties of Yb3+-Tb3+ co-doped amorphous silicon oxycarbide thin films
This work analyzes the photoluminescence emission of Yb3+ and Tb3+ ions in co-doped silicon oxycarbide thin films, their activation by thermal treatment, and reveals their luminescent properties regarding the energy...
Año de publicación: 2019
This work analyzes the photoluminescence emission of Yb3+ and Tb3+ ions in co-doped silicon oxycarbide thin films, their activation by thermal treatment, and reveals their luminescent properties regarding the energy...
Año de publicación: 2019
Band-fluctuations model for the fundamental absorption of crystalline and amorphous semiconductors: a dimensionless joint density of states analysis
We develop a band-fluctuations model which describes the absorption coefficient in the fundamental absorption region for direct and indirect electronic transitions in disordered semiconductor materials. The model accurately describes both...
Año de publicación: 2019
We develop a band-fluctuations model which describes the absorption coefficient in the fundamental absorption region for direct and indirect electronic transitions in disordered semiconductor materials. The model accurately describes both...
Año de publicación: 2019
Optical characterization and bandgap engineering of flat and wrinkle-textured FA0.83Cs0.17Pb(I1 − xBrx)3 perovskite thin films
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Año de publicación: 2018
Nunc ac ante lacinia quam dignissim rhoncus. Suspendisse venenatis sem elit. Proin vestibulum pulvinar odio. Pellentesque sollicitudin hendrerit nulla quis vestibulum
Año de publicación: 2018
On the Appearence of Wrinkled Morphology for CsxFA1-xPb(I1 −yBry)3 Perovskite Compositions and the Impact on Solar Cell Performance
Año de publicación: 2018
Año de publicación: 2018
Passivation of Liquid‐Phase Crystallized Silicon With PECVD‐SiNx and PECVD‐SiNx/SiOx
Año de publicación: 2018
Año de publicación: 2018
Optical characterization and bandgap engineering of flat and wrinkle-textured FA0.83Cs0.17Pb(I1 − xBrx)3 perovskite thin films
Año de publicación: 2018
Año de publicación: 2018
Determination of the Complex Refractive Index, Optical Bandgap, and Urbach Energy of CH₃NH₃PbI₃ and FA₁₋ᵧCsᵧPb(I₁₋ₓBrₓ)₃ Perovskite Thin Films
The complex refractive indices of CH₃NH₃PbI₃ and FA₁₋ᵧCsᵧPb(I₁₋ₓBrₓ)₃ perovskite thin films are reported. These values are determined point-by-point using a combination of spectroscopic ellipsometry and transmittance measurements. The optical bandgaps...
Año de publicación: 2018
The complex refractive indices of CH₃NH₃PbI₃ and FA₁₋ᵧCsᵧPb(I₁₋ₓBrₓ)₃ perovskite thin films are reported. These values are determined point-by-point using a combination of spectroscopic ellipsometry and transmittance measurements. The optical bandgaps...
Año de publicación: 2018