Projects
IMPACT OF RARE-EARTH IONS INCORPORATION IN HIGH MOBILITY WIDE BANDGAP DEGENERATED SEMICONDUCTORS: STUDY CONSIDERING MANY-BODY EFF ECTS AND ADVANCED OPTICAL DISPERSION MODELS

2024/2031

The objective of this research project is to investigate the optoelectronic and electrical properties of high-mobility transparent conductive oxide (TCO) thin films (IZO, IGZO, and IZrO) and to evaluate the structural impact of rare-earth (RE) integration. The study intends to utilize recently developed advanced optical dispersion models to describe fundamental absorption, alongside appropriate models for free-carrier absorption that account for various electronic scattering mechanisms through a dynamic resistivity analysis. Furthermore, the curvature of the conduction and valence band edges will be determined via effective mass analysis, integrating both optical and electrical measurements.
Subsequently, a crystal field analysis will be conducted to evaluate the local symmetry surrounding the RE ions based on light emission from activated rare-earth centers. Following this, an in-depth investigation will be performed to manipulate the luminescent properties of rare earths within these hosts, aiming to preserve their critical attributes, such as high optical transparency in the visible spectrum and low electrical resistivity. This research is expected to elucidate the capacity of TCOs to host optically active rare-earth ions without significant degradation of their optical and electrical performance. Additionally, it will enable the analysis of the Burstein-Moss shift, electron-electron and electron-impurity interactions, and the renormalization effect within the framework of current optical dispersion models for high-mobility TCOs

 

Participants:

Fecha de inicio: 01/11/2024
Fecha final: 31/10/2031
Estado DGI: En proceso